Silicon carbide microelectromechanical systems for harsh environments 1st Edition by Rebecca Cheung 1860946240 9781860946240

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ISBN 10: 1860946240 

ISBN 13: 9781860946240

Author: Rebecca Cheung

This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS.This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product.

Table of contents:

1 Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS)

1 Introduction

2 SiC Material Properties

3 Making a Microelectromechanical (MEM) Device

3.1 Micromachining Processes

3.1.1 Bulk micromachining

3.1.2 Surface micromachining

4 Surface Modification

5 Frequency Tuning of the SiC MEMS

6 Mechanical Testing of the MEMS

7 Application Examples

8 Summary

References

2 Deposition Techniques for SiC MEMS

1 Introduction

2 Deposition Issues Related to SiC for MEMS

3 Atmospheric Pressure Chemical Vapor Deposition

3.1 Epitaxial 3C-SiC Films

3.2 Polycrystalline 3C-SiC Films

4 Plasma Enhanced Chemical Vapor Deposition

5 Low Pressure Chemical Vapor Deposition

5.1 Overview

5.2 Epitaxial 3C-SiC Films

5.3 Polycrystalline 3C-SiC Films

6 Doping ofLPCVDPoly-SiC Films

7 Other Deposition Methods

8 Conclusions

References

3 Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996 – 2002

1 Introduction

2 Thermal Stability

2.1 Thermal Stability of Ohmic Contacts

2.2 Thermal Stability of Rectifying Contacts

3 Ohmic Contacts to p-type SiC

3.1 Introduction

3.2 Al-based Contacts

3.3 Al-free Contacts

4 Ohmic Contacts Using Nickel

4.1 Introduction

4.2 Thermodynamics

4.3 Phase Formation Sequence

4.4 Issues

4.5 Mechanisms

4.6 Alloying

5 Effects of Defects on Schottky Contacts

6 Summary

Acknowledgments

References

4 Dry Etching of SiC

1 Introduction

2 Basics of Plasma Etching

2.1 Plasma Creation

2.2 Basic Mechanism of Plasma Etching

2.2.1 Sputtering

2.2.2 Chemical reaction

2.2.3 Ion-assisted plasma etching

2.3 Plasma Reactors

2.3.1 Ion milling

2.3.2 Reactive ion etching (RIE)

2.3.3 Electron-cyclotron resonance (ECR)

2.3.4 Inductive coupled-plasma (ICP)

3 Plasma Etching of Silicon Carbide

4 Plasma Chemistries

5 Mask Materials

6 Recent Developments and Future Trends

7 Summary

References

5 Design Performance and Applications of SiC MEMS

1 Introduction

1.1 Properties of SiC

1.2 Fields of Applications

1.3 Available Material Systems

1.4 SiC MEMS Fabrication Technologies

2 SiC MEMS Devices

2.1 Test Structures

2.1.1 Young’s modulus and residual stress

2.1.2 Piezoresistive effect

2.1.3 Thermal conductivity

2.2 Pressure Sensors

2.3 Accelerometers

2.4 Resonator Structures

2.5 Motors

2.6 Wear Resistant Devices

2.7 Chemical Sensors

2.7.1 Field effect gas sensor devices

2.7.2 Microhotplates

2.7.3 Other chemical sensors

2.8 Optical Devices

2.8.1 Light emitting diodes

2.8.2 Photodetectors

2.8.3 Other optical devices

2.9 Radiation Detectors

2.10 RF MEMS

2.11 SiCNEMS

3 Conclusions and Outlook

4 Acknowledgment

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